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  rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 50 1 28 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 8 r fpa55 1 2 wifi integrated pa module 4.9g hz to 5.85ghz the rfpa55 1 2 is a thre e - stage power amplifier (pa) designed for 802.11a/n/ac applications. the integr ated input and output 50? match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. the rfpa55 1 2 is manufactured on an advanced ingap heterojunction bipolar transistor (hbt) process and is capable of achieving linear powers up to 2 3 dbm with an evm <1.8% while maintaining excellent power added efficiency. the device is provided in a 4 .0 mm x 4 .0 mm x 0.9 mm qfn package that meets or exceeds the power requirements of ieee802.11a/n/ac wifi rf systems . gnd rfout gnd vcc1 pdet vref vcc2 rc1 rfin bias circuit nc gnd gnd gnd gnd vcc3 gnd gnd nc nc rc2 7 9 10 6 8 19 17 16 20 18 14 12 11 15 13 2 4 5 1 3 funtin k dir ordering information rfpa55 1 2sb standard 5 - piece s ample b ag rf pa55 1 2 sq standard 25 - piece s ample b ag rf pa55 1 2 sr standard 100 - piece r eel rfpa5512tr13 standard 2500 - piece reel rfpa55 1 2 pc k - 410 fully a ssembled e val b oard w/5 - piece bag package: qfn , 20 - pin, 4.0mm x 4.0mm x 0.9 mm features p out = 23 dbm , 5v, 11ac, 80mhz mcs9 @ 1.8% evm pout = 25dbm, 5v, 11n, 20/40 mhz, mcs7 @ 3% typical gain = 33db high pae input and output matched to 50? integrated power detector , harmonic filter, and notch filter applications customer premise equipment (cpe) wireless access points, gateways routers set - top box applications picocell/femtocell rfpa55 1 2
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 8 r fpa5512 absolute maximum rat ings parameter rating unit dc supply voltage - 0.5 to + 6 v dc dc supply current 1000 ma operating temperature range - 40 to +85 oc storage temperature - 40 to +150 oc maximum tx input power into 50? for 11a/n/ac (no damage) . *r1=0 ? + 10 dbm maximum tx input power 10:1 vswr for 11a/n/ac (no damage) . *r1=15? * note: for r1 placement please refer to the applications schematic caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. this is a n ingap pa designed for high duty cycle applications with tj>100 o c. nominal operating parameters parameter specification unit condition min typ max compliance ieee 802.11a/n/ac operating frequency 5.180 5.9 25 ghz extended operating frequency 4.900 5.180 ghz power supply v cc 4.75 5.00 5.25 v power supply v ref 2.8 5 2. 90 2.9 5 v t= +25 o c, v cc =5.0v, v ref = 2.90 v, over operating frequency r ange, unless otherwise n oted ieee802. 11ac 80mhz output power 2 2 2 3 dbm mcs9 , 256qam ieee802. 11ac 80mhz evm 1.5 1.8 % - 3 6.5 - 35 db ieee802.11n 20/40 mhz output power 23.5 25 dbm mcs7, 64qam ieee802.11n 4 0mhz evm 2.5 3 % - 32.0 - 30.5 db large signal gain 31 3 3 db gain variation over temp - 2.0 + 2.0 db over a ny 100mhz f requency band margin to spectral mask 5 0 db p out =2 5 dbm ; mcs0 80mhz 5 0 db p out =2 6 dbm ; mcs0 40mhz 5 0 db p out =2 7 dbm ; mcs0 20mhz, 11a 6mbps operating current 275 3 25 ma p out =2 3 dbm 375 420 ma p out =2 7 dbm quiescent current 1 40 ma v ref current 1 2 ma leakage current 100 250 n a rf off; v ref = 0v second harmonic - 45 - 40 dbm/ mhz p out = 2 7db over operating frequency band. third harmonic - 50 - 45 dbm/ mhz oob rejection - 5 db gain (s21) @ 3.3 ? 3.8 ghz 7 db gain ( s21) @ 7.0 ghz r fpa5512
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 8 r fpa5512 parameter specification unit condition min typ max t= +25 o c, v cc =5.0v, v ref = 2.90 v, over operating frequency range, unless otherwise n oted input return loss 15 db output return loss 12 db power detect or range 0. 25 v p out = 0dbm , rf=off 0.65 v p out = 23dbm 0.88 v p out = 2 7 dbm general specifications pa stability output power range in to 4:1 vswr 27 dbm cw signal. no spurious above - 41.25dbm/mhz for non - harmonic related signals. output p1db 33 dbm cw signal ramp on/off time 200 ns 10 - 90% / 90 - 10% of gain thermal resistance * 35 c/w 100% duty cycle, p out = 27dbm esd hbm 500 v eia/jesd22 - 114a; all pins esd cdm 300 v jesd22 - c101c; all pins
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 8 r fpa5512 t iming diagram
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 8 r fpa5512 evaluation board schematic r 4 1 . 5 k ? ( 0402 ) vref pdet j 2 rf_out 50? strip j 1 rf_in 50? strip vcc2 c1 2.2uf (0402) c3 2.2 f (0402) c5 1nf (0402) c2 2.2uf (0402) 6 7 8 9 4 3 20 19 18 17 2 1 11 12 13 14 u1 rfpa5512 10 15 5 16 c6 10pf (0402) c9 3.3nf (0402) r2 1.5k? ( 0402 ) c4 5.6nf (0402) vcc1 vcc3 c7 10pf (0402) c8 10pf (0402) r1 0? ( 0402 )
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 8 r fpa5512 pin out gnd rfout gnd vcc1 pdet vref vcc2 rc1 rfin nc gnd gnd gnd gnd vcc3 gnd gnd nc nc rc2 19 17 16 20 18 14 12 11 15 13 2 4 5 1 3 7 9 10 6 8 package drawing (dimensions in mm)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 8 r fpa5512 pcb patterns (dimensions in mm)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 150128 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of p atents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 8 r fpa5512 pin names and descriptions pin name description 1 nc not connected internally. it may be left floating or connected to ground. 2 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 3 rfin rf inp ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 4 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 5 vref input bias voltage. this pin requires a regulated supply to maintain nominal bias current. 6 rc1 tuning rc pin 1. see evb schematic for details. 7 rc2 tuning rc pin 2. see evb schematic for details. 8 nc not connected internally. it may be left floating or connected to ground. 9 nc not connected internally. it may be left floating or connected to ground. 10 pdet power detector . p rovides an output voltage proportional to the rf output power level. 11 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 12 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 13 rfout rf out p ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 14 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 15 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 16 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 17 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 18 vcc3 third stage supply voltage 19 vcc2 second stage supply voltage. 20 vcc1 first stage supply voltage. pkg base gnd ground connection. the back side of the package should be connected to the ground plan though as short of a connection as possible. pcb vias under the device are recommended.


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